dm n1016ucb6 document number: ds 37124 rev. 4 - 2 1 of 6 www.diodes.com july 2015 ? diodes incorporated dmn1016ucb6 new product advanced information n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25 c 12 v 20 m ? @ v gs = 4.5 v 6 . 6 a 23 m ? @ v gs = 2.5 v 6 . 1 a description and applications this new generation mo sfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? battery management ? load switch ? battery protection features a nd benefits ? low q g & q gd ? small footprint ? low profile 0.62mm h eight ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - wlb1510 - 6 ? terminal connections: see diagram below ? weight: 0. 00 18 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n 1016 ucb 6 - 7 u - wlb1510 - 6 3 , 000/tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and an timony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.htm l . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - wlb1510 - 6 p w = product type marking code ym = date code marking y = year (ex: y = 201 1) m = month (ex: 9 = september) top view u - wlb1510 - 6 green
dm n1016ucb6 document number: ds 37124 rev. 4 - 2 2 of 6 www.diodes.com july 2015 ? diodes incorporated dmn1016ucb6 new product advanced information maximum ratings (@ t a = +25c, unless otherwise spec ified.) characteristic symbol value units drain - source voltage v dss 12 v gate - source voltage v gss 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 5 . 5 4 . 2 a continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 6 . 6 5 . 3 a pulsed drain current (note 7 ) i dm 30 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 0.92 w total power dissipation (note 6 ) p d 1.47 w thermal resistance, junction to ambient (note 5 ) r ja 136 c/w thermal resistance, junction to ambient (note 6 ) r ja 9 4 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unle ss otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250a c = + 25c ) i dss ds = 9.6 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 0.4 0. 6 1. 0 v v ds = v gs , i d = 250 a ds (on) ? gs = 4.5 v, i d = 1.5 a gs = 2 .5v, i d = 1.5 a forward transfer admittance |y fs | ds = 6 v , i d = 1.5 a diode forward voltage (note 6 ) v sd gs = 0v, i s = 1.5 a reverse recovery charge q rr dd = 6 v, i f = 1.5 a, di/dt = 2 00a/ s reverse recovery time t rr dynamic characteristics (note 9 ) input capacitance c iss ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge (4.5v) q g gs = 4.5 v, v ds = 6 v, i d = 1.5 a gate - source charge q gs gd d(on) d s = 6 v, v gs = 4.5 v, r g = 4 d = 1.5 a turn - on rise time t r d(off) f notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout . 6 . device mounted on fr4 material with 1 - inch 2 (6.4 5 - cm 2 ), 2 - oz (0.071 - mm thick) cu . 7 . 300ms pulse, pulse duty cycle<= 2 % . 8 . short duration pulse test used t o minimize self - heating effect. 9. guaranteed by design. not subject to production testing .
dm n1016ucb6 document number: ds 37124 rev. 4 - 2 3 of 6 www.diodes.com july 2015 ? diodes incorporated dmn1016ucb6 new product advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 v = 1.0v gs v = 1.5v gs v = 2.0v gs v = 4.0v gs v = 2.5v gs v = 4.5v gs v = 8.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.015 0.017 0.019 0.021 0.023 0.025 0 2 4 6 8 10 12 14 16 18 20 v = 2.5v gs v = 4.5v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.02 0.04 0.06 0.08 0.1 0 1 2 3 4 5 6 7 8 i = 1.5a d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0.026 0.028 0.03 0 2 4 6 8 10 12 14 16 18 20 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.8 1.2 1.6 2 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 5a gs d v = v i = 2.0a gs d 2.5
dm n1016ucb6 document number: ds 37124 rev. 4 - 2 4 of 6 www.diodes.com july 2015 ? diodes incorporated dmn1016ucb6 new product advanced information t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 v = .5v i = 2a gs d 2 v = v i = 5a gs d 4.5 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 85c a t = 25c a t = -55c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 0 2 4 6 8 10 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 0 1 2 3 4 5 6 7 8 v = 6v i = a ds d 1.5 t , pulse duration time (sec) figure 12 single pulse maximum power dissipation 1 p , p e a k t r a n s i e n t p o w e r ( w ) ( p k ) 0 100 200 300 400 500 600 1e-05 0.001 0.1 10 1000 single pulse r = 125 r (t) = r *r(t) t - t = p* r (t) ? ?? ? ja ja ja j a ja c/w
dm n1016ucb6 document number: ds 37124 rev. 4 - 2 5 of 6 www.diodes.com july 2015 ? diodes incorporated dmn1016ucb6 new product advanced information pack age outline dimensions please see ap0200 2 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - wlb1510 - 6 dim min max typ a -- 0.62 -- a2 -- -- 0.038 b 0.27 0.37 0.32 d 1.40 1.50 1. 50 e 0.90 1.00 1.00 e -- -- 0.50 all dimensions in m m dimensions value (in mm) c 0.50 c1 1.00 d 0.25 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 125c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 c c d c1 d e e e e a2 a seating plane ? b (4x)
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